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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage :VCEO=100V Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH Collector;connected to mounting base Emitter CONDITIONS VALUE 100 Collector-base voltage Open emitter Collector-emitter voltage Open base 100 5 5 -5 TC=25ae 40 150 -55~150 Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Open collector UNIT V V V A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; IB=0 IE=10mA; IC=0 IC=4A;IB=0.4 A IC=1A ; VCE=5V VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 40 20 MIN 100 5 TYP. 2SD525 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V 2.0 1.5 100 1 240 |I V V A mA hFE-1 classifications R 40-80 O TOR NDU ICO E SEM ANG INCH Transition frequency IC=1A ; VCE=5V 12 Output capacitance IE=0; VCB=10V;f=1MHz 100 MHz pF Y 70-140 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD525 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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